Stud capacitor device and fabrication method

Details Stud capacitor device and fabrication method Stud capacitor device and fabrication method

2007-11-06

2010-11-23

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C438S387000

Reexamination Certificate

active

07838381

ABSTRACT:
The present teachings relate to a method of forming a container capacitor structure on a substrate. In one embodiment, the method comprises etching a recess in the substrate, depositing a first conductive layer on the substrate so as to overlie the substrate and the recess, depositing a filler layer so as to overlie the first conductive layer and fill the recess, and etching the first and second conductive layers so as to define a lower electrode within the recess. The method further comprises forming a cap layer on the lower electrode so as to overlie the first conductive layer and the filler layer and etching at least a portion of the substrate away from the lower electrode to thereby at least partially isolate the lower electrode. Subsequently, the remainder of the capacitor structure may be formed by depositing a dielectric layer on the lower electrode and depositing a second conductive layer on the dielectric layer so as to form an upper electrode.

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