Structures useful in electron beam lithography

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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06919150

ABSTRACT:
A method for forming a mask assembly for use in lithography, typically electron-beam lithography, first forms in a substrate one half of a plurality of opening therethrough and then fills the openings with a removable fill material. Thereafter are formed the other half of the openings which are then filled with the removable fill material. After all the openings have been formed and filled, a support membrane is formed over the substrate and covers the filled windows. A mask layer is then formed over the membrane and patterned. The fill is then removed from all of the windows.

REFERENCES:
patent: 4827138 (1989-05-01), Randall
patent: 5899728 (1999-05-01), Mangat et al.
patent: 6168890 (2001-01-01), Takahashi
S. D. Berger et al., “New approach to projection-electron lithography with demonstrated 0.1μm linewidth”, Applied Physics Letters, vol. 57, No. 2, pp. 153-155 (Jul. 1990).
S. D. Berger et al., “Projection electron-beam lithography: A new approach”, J. Vac. Sci. Technol. B, vol. 9, No. 6, pp. 2996-2999 (Nov./Dec. 1991).

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