Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-07-19
2005-07-19
Huff, Mark F. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
Reexamination Certificate
active
06919150
ABSTRACT:
A method for forming a mask assembly for use in lithography, typically electron-beam lithography, first forms in a substrate one half of a plurality of opening therethrough and then fills the openings with a removable fill material. Thereafter are formed the other half of the openings which are then filled with the removable fill material. After all the openings have been formed and filled, a support membrane is formed over the substrate and covers the filled windows. A mask layer is then formed over the membrane and patterned. The fill is then removed from all of the windows.
REFERENCES:
patent: 4827138 (1989-05-01), Randall
patent: 5899728 (1999-05-01), Mangat et al.
patent: 6168890 (2001-01-01), Takahashi
S. D. Berger et al., “New approach to projection-electron lithography with demonstrated 0.1μm linewidth”, Applied Physics Letters, vol. 57, No. 2, pp. 153-155 (Jul. 1990).
S. D. Berger et al., “Projection electron-beam lithography: A new approach”, J. Vac. Sci. Technol. B, vol. 9, No. 6, pp. 2996-2999 (Nov./Dec. 1991).
Guo Cheng
Moffatt Stephen
Church Shirley L.
Huff Mark F.
Mohamedulla Saleha
LandOfFree
Structures useful in electron beam lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structures useful in electron beam lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structures useful in electron beam lithography will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3368585