Structures of modulation doped base hot electron transistors

Details Structures of modulation doped base hot electron transistors Structures of modulation doped base hot electron transistors

1990-03-06

1992-12-15

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257191, 257195, H01L 29161

Patent

active

051721945

ABSTRACT:
A three-terminal hot-electron device, in particular a two dimensional electron gas base transistor which can be fabricated by molecular beam epitaxy (MBE). The two-dimensional electron gas is induced in an undoped GaAs quantum well by a modulation doping is used as the base of the transistor and permits a common-base current gain .alpha. to be achieved as high as 0.96 under a collector bias of 2.5 V and an emitter current of 3 mA.

REFERENCES:
patent: 4758868 (1988-07-01), Frijlink
patent: 4835581 (1989-05-01), Kuroda et al.
patent: 4878095 (1989-10-01), Bending et al.
patent: 4926232 (1990-05-01), Ando et al.
Hayes et al., "Hot-Electron Transport in a Graded Band-Gap Base Heterojunction Bipolar Transistor," Appl. Phys. Lett. 53(6), Aug. 8, 1988, pp. 490-492.
No Author, "Graded Barrier in Tunnelling Hot Electron Transfer Amplifiers", IBM Technical Disclosure Bulletin, vol. 31, No. 8, Jan. 1989, p. 345.

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