Structures including perovskite dielectric layers and...

Details Structures including perovskite dielectric layers and... Structures including perovskite dielectric layers and...

2006-07-11

2006-07-11

Xu, Ling (Department: 1775)

Stock material or miscellaneous articles

Composite

Of inorganic material

C428S457000, C428S469000, C428S689000, C428S697000, C428S699000, C428S336000

Reexamination Certificate

active

07074507

ABSTRACT:
Oxygen partial pressure may be controlled during annealing of a perovskite dielectric layer by providing an oxygen-absorbing layer adjacent the perovskite dielectric layer, and annealing the perovskite dielectric layer in an ambient that includes an ambient oxygen partial pressure, such that the oxygen-absorbing layer locally reduces the oxygen partial pressure adjacent the perovskite dielectric layer to below the ambient oxygen partial pressure. Thus, a perovskite dielectric layer can be annealed without the need to provide ultra-high vacuum and/or ultra-high purity ambient environments.

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