Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2006-10-17
2006-10-17
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C438S105000, C365S064000, C365S114000
Reexamination Certificate
active
07122837
ABSTRACT:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.
REFERENCES:
Wrachtrup, “Optocal spectroscopy and control of single defect centers in solids”, Postconference Digest of Quantum Electronics and Laser Science (QELS), Jun. 2003, (QMJ2) 2 pages.
Hemmer et al., “Raman excited spin coherences in N-V diamond”, Lasers and Electro-optics Conference, 2001, pp. 374-375.
Kilinn et al., “Model systems and photo-kinetics of single N-V defect centers in diamond”, Quantum Electronics Conference, 2000, (9.15 QWA3), 1 page.
Drabenstedt et al., “Low-temperature microscopy and spectroscopy on single dfect centers in diamond”, Physical Review B, Oct. 1999, vol. 60, No. 16, pp. 503-508.
Gruber et al., “Scanning Confocal Optical Microscopy and Magnetic Resonance on Single Defect Centers”, Science, Jun. 1997, vol. 276, pp. 2012-2014.
Doering Patrick J.
Dromeshauser William
Genis Alfred
Linares Bryant
Linares Robert C.
Apollo Diamond, Inc
Pert Evan
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Structures formed in diamond does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structures formed in diamond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structures formed in diamond will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3701570