Structures formed in diamond

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

Reexamination Certificate

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C438S105000, C365S064000, C365S114000

Reexamination Certificate

active

07122837

ABSTRACT:
N-V centers in diamond are created in a controlled manner. In one embodiment, a single crystal diamond is formed using a CVD process, and then annealed to remove N-V centers. A thin layer of single crystal diamond is then formed with a controlled number of N-V centers. The N-V centers form Qubits for use in electronic circuits. Masked and controlled ion implants, coupled with annealing are used in CVD formed diamond to create structures for both optical applications and nanoelectromechanical device formation. Waveguides may be formed optically coupled to the N-V centers and further coupled to sources and detectors of light to interact with the N-V centers.

REFERENCES:
Wrachtrup, “Optocal spectroscopy and control of single defect centers in solids”, Postconference Digest of Quantum Electronics and Laser Science (QELS), Jun. 2003, (QMJ2) 2 pages.
Hemmer et al., “Raman excited spin coherences in N-V diamond”, Lasers and Electro-optics Conference, 2001, pp. 374-375.
Kilinn et al., “Model systems and photo-kinetics of single N-V defect centers in diamond”, Quantum Electronics Conference, 2000, (9.15 QWA3), 1 page.
Drabenstedt et al., “Low-temperature microscopy and spectroscopy on single dfect centers in diamond”, Physical Review B, Oct. 1999, vol. 60, No. 16, pp. 503-508.
Gruber et al., “Scanning Confocal Optical Microscopy and Magnetic Resonance on Single Defect Centers”, Science, Jun. 1997, vol. 276, pp. 2012-2014.

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