Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1993-07-22
1995-11-21
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257635, 257637, 257639, 257640, 257649, H01L 2934
Patent
active
054689902
ABSTRACT:
Embodiments according to the present invention provide tamper resistant structures which make it more difficult to reverse engineer integrated circuits. In one embodiment, a tamper resistant structure on a passivation layer leaves portions of the passivation layer exposed. Mechanical or chemical removal of the tamper resistant structure damages exposed portions of the passivation layer and makes reverse engineering difficult. Other embodiments of the tamper resistant structure include patterned and unpatterned structures containing hard materials, chemically resistant materials, amalgams, fibrous materials, and/or meshes attached to a passivation layer. Tamper resistant structures can also be provided between layers of the active circuitry.
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Ghandhi, S. K. VLSI Fabrication Principles, John Wiley, 1983, pp. 494-495.
Patent Abstracts of Japan, vol. 13, No. 437(E-836) 29 Sep. 1989 & JP,A,01,165 129 (Sharp Corp.) 29 Jun. 1989 see abstract.
Crane Sara W.
Millers David T.
National Semiconductor Corp.
Winters Paul J.
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