Structures for light emitting devices with integrated...

Details Structures for light emitting devices with integrated... Structures for light emitting devices with integrated...

2006-12-19

2006-12-19

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S079000, C257SE33001

Reexamination Certificate

active

07151284

ABSTRACT:
A substrate for supporting epitaxial growth of light emitting semiconductor devices having a non-crystalline multilayer reflection controlling stack under a thin layer of single crystal silicon is shown. A III-Nitride or other semiconductor stimulated emission device is grown on the thin layer of silicon.

REFERENCES:
patent: 3421936 (1969-01-01), Vogel, Jr.
patent: 5835521 (1998-11-01), Ramdani et al.
patent: 2002/0030198 (2002-03-01), Coman et al.
patent: 2004/0224459 (2004-11-01), Nishikawa

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