Structures and methods to improve the crosstalk between...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

Reexamination Certificate

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C257SE31057

Reexamination Certificate

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07875890

ABSTRACT:
Structures and methods to improve the crosstalk between adjacent pixels of back-illuminated photodiode arrays on a substrate having first and second surfaces, including providing a first matrix of regions of a first conductivity type of a higher conductivity than the substrate extending into the substrate from the first surface and surrounding each photodiode of the array, and providing a second matrix of regions of a first conductivity type of a higher conductivity than the substrate extending into the substrate from the second surface, the second matrix being a mirror image of and aligned with the first matrix, the matrices extending into the substrate less than one half the thickness of the substrate so as to not touch each other. The methods and corresponding structures may be applied to p
diodes, pin diodes, avalanche photodiodes, photoconductive cells (no p-n junction at all), or similar photosensitive device arrays.

REFERENCES:
patent: 3574009 (1971-04-01), Chizinsky et al.
patent: 4144096 (1979-03-01), Wada et al.
patent: 4963971 (1990-10-01), Rosetti et al.
patent: 5072312 (1991-12-01), Schwarzbauer et al.
patent: 5075748 (1991-12-01), Hisa
patent: 5538564 (1996-07-01), Kaschmitter
patent: 5670383 (1997-09-01), Piccone et al.
patent: 6111305 (2000-08-01), Yoshida et al.
patent: 6184100 (2001-02-01), Arai
patent: 6426991 (2002-07-01), Mattson et al.
patent: 6504178 (2003-01-01), Carlson et al.
patent: 6653164 (2003-11-01), Miida
patent: 6707046 (2004-03-01), Possin et al.
patent: 6762473 (2004-07-01), Goushcha et al.
patent: 6777729 (2004-08-01), Prince et al.
patent: 6853046 (2005-02-01), Shibayama
patent: 6933489 (2005-08-01), Fujii et al.
patent: 7112465 (2006-09-01), Goushcha et al.
patent: 7148464 (2006-12-01), Shibayama
patent: 7242069 (2007-07-01), Bui et al.
patent: 7297927 (2007-11-01), Carlson et al.
patent: 7375340 (2008-05-01), Hietanen et al.
patent: 7408238 (2008-08-01), Shibayama
patent: 7417216 (2008-08-01), Carlson et al.
patent: 7420257 (2008-09-01), Shibayama
patent: 7462553 (2008-12-01), Metzler et al.
patent: 7576369 (2009-08-01), Bui et al.
patent: 7576404 (2009-08-01), Wilson et al.
patent: 2002/0000562 (2002-01-01), Carlson et al.
patent: 2002/0011639 (2002-01-01), Carlson et al.
patent: 2002/0020846 (2002-02-01), Pi et al.
patent: 2002/0058353 (2002-05-01), Merrill
patent: 2002/0148967 (2002-10-01), Iwanczyk et al.
patent: 2003/0209652 (2003-11-01), Fujii et al.
patent: 2004/0032026 (2004-02-01), Yang et al.
patent: 2004/0104351 (2004-06-01), Shibayama
patent: 2004/0113185 (2004-06-01), Shibayama et al.
patent: 2004/0129992 (2004-07-01), Shibayama
patent: 2004/0262652 (2004-12-01), Goushcha et al.
patent: 2005/0221541 (2005-10-01), Metzler et al.
patent: 2006/0197188 (2006-09-01), Fujii et al.
patent: 2007/0018212 (2007-01-01), Shibayama
patent: 2007/0085117 (2007-04-01), Wilson et al.
patent: 2007/0111356 (2007-05-01), Wilson et al.
patent: 2007/0241377 (2007-10-01), Goushcha et al.
patent: 2008/0299698 (2008-12-01), Wilson et al.
patent: 0373066 (1990-06-01), None
“New Photodiode Array Products for Computer Tomography-Detectors”,Detection Technology, Inc., New Bulletion for the Customers and Cooperation Partners, (Winter 2000-2001).
“S268P Data Sheet, Silicon PIN Photodiode Array”,Vishay Semiconductors, Document No. 81538, (May 20, 1999), pp. 1-5.
“Si Photodiode Catalog”,Hamamatsu Photonics K.K., Solid State Division, (Feb. 2002), pp. 1-25.
Burns, H.N., et al., “Compact, 625-channel scannerless imaging laser radar receiver”,Proc. SPIE., vol. 2748, (1996), pp. 39-46.
Derenzo, Stephen E., “Initial Characterization of a BGO-Photodiode Detector for High Resolution Positron Emission Tomography”,IEEE Transactions on Nuclear Science, vol. NS-31, No. 1, (Feb. 1984), pp. 620-626.
Goushcha, Ilja , et al., “Noise performance and temperature coefficients studies for the back-illuminated, thin silicon pin photodiode arrays”,Proceedings of the SPIE, Semiconductor Photodetectors III, 2006, vol. 6119, pp. 61190C-1-61190C-9.
Holland, S.E. , et al., “Development of Low Noise, Back-Side Illuminated Silicon Photodiode Arrays”,IEEE Transactions on Nuclear Science, vol. 44, No. 3, (Jun. 1997), pp. 443-447.
Iwanczyk, J.S. , et al., “Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications”,Nuclear Instruments and Methods in Physics Research, Section A, vol. 380, pp. 288-294.
Kwa, Tommy A., et al., “Backside-Illuminated Silicon Photodoide Array for an Integrated Spectrometer”,IEEE Transactions on Electron Devices, vol. 44, No. 5, (May 1997), pp. 761-765.
Luhta, Randy , et al., “Back Illuminated Photodiodes for Multislice CT”, San Diego, California, USA, (Feb. 15-20, 2003).
Luhta, Randy , et al., “Back Illuminated Photodiodes for Multislice CT: An Estimation of Temporal and Spatial Properties by Carrier Diffusion Modeling”,Proceedings of the SPIE, Medical Imaging 2004: Physics of Medical Imaging, Bellingham, WA, vol. 5368, pp. 552-563.
Metzler, Richard A., et al., “Ultra-thin, two dimensional, multi-element Si pin photodiode array for multipurpose applications”,Proceedings of the SPIE, Semiconductor Photodetectors 2004, Belligham, WA, vol. 5353, pp. 117-125.
Patt, B.E. , et al., “Fast-Timing Silicon Photodetectors”,IEEE Transactions on Nuclear Science, vol. 47, No. 3, (Jun. 2000), pp. 957-964.
Patt, B.E. , et al., “High Resoluton Csl(T1)/Si-PIN Detector Development for Breast Imaging”,IEEE Transactions on Nuclear Science, vol. 45, No. 4, (Aug. 1998), pp. 2126-2131.
Tabbert, Bernd , et al., “The structure and physical properties of ultra-thin, multi-element Si pin photodiode arrays for medical imaging applications”,Proceedings of SPIE, Medical Imaging 2005: Physics of Medical Imaging, Bellingham, WA, vol. 5745, pp. 1146-1154.
Takahashi, Tetsuhiko , et al., “Design of Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators for use in X-Ray Computed Tomography”,IEEE Transactions on Nuclear Science, vol. 37, No. 3, (Jun. 1990), pp. 1478-1482.
Tornai, Matrin P., et al., “A novel silicon array designed for intraoperative charged particle imaging”,Medical Physics, vol. 29, No. 11, (Nov. 2002), pp. 2529-2540.
Yang, Min , et al., “High Speed silicon Lateral Trench Detector on SOI Substrate”,International Electron Devices Meeting, New York, NY, IEDM Technical Digest, IEEE, US, (Dec. 2-5, 2001), pp. 24.1.1-24.1.4.

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