Structures and methods to enhance Cu interconnect...

Semiconductor device manufacturing: process – Direct application of electrical current – Electromigration

Reexamination Certificate

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C438S618000, C438S927000, C257SE23170

Reexamination Certificate

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07981771

ABSTRACT:
The invention generally relates to semiconductor devices, and more particularly to structures and methods for enhancing electromigration (EM) performance in interconnects. A method includes forming an interconnect, forming a cap on the interconnect, and forming a plurality of holes in the cap to improve electromigration performance of the interconnect.

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