Semiconductor device manufacturing: process – Direct application of electrical current – Electromigration
Reexamination Certificate
2011-07-19
2011-07-19
Loke, Steven (Department: 2829)
Semiconductor device manufacturing: process
Direct application of electrical current
Electromigration
C438S618000, C438S927000, C257SE23170
Reexamination Certificate
active
07981771
ABSTRACT:
The invention generally relates to semiconductor devices, and more particularly to structures and methods for enhancing electromigration (EM) performance in interconnects. A method includes forming an interconnect, forming a cap on the interconnect, and forming a plurality of holes in the cap to improve electromigration performance of the interconnect.
REFERENCES:
patent: 5712510 (1998-01-01), Bui et al.
patent: 5900735 (1999-05-01), Yamamoto
patent: 6191481 (2001-02-01), Bothra et al.
patent: 6288450 (2001-09-01), Narita et al.
patent: 6320262 (2001-11-01), Murakami
patent: 6459153 (2002-10-01), Sengupta
patent: 6552434 (2003-04-01), Hasunuma et al.
patent: 6825671 (2004-11-01), Zhang
patent: 7251799 (2007-07-01), Nogami et al.
patent: 7671444 (2010-03-01), Wang et al.
patent: 7737528 (2010-06-01), Bonilla et al.
patent: 2004/0061237 (2004-04-01), Zhao et al.
patent: 2004/0166665 (2004-08-01), Gaillard et al.
patent: 2004/0207092 (2004-10-01), Burrell et al.
patent: 2007/0138511 (2007-06-01), Oates et al.
patent: 2007/0284662 (2007-12-01), Chinthakindi et al.
patent: 2008/0017989 (2008-01-01), Lee et al.
patent: 2009/0014884 (2009-01-01), Li
E. Todd Ryan et al. ,“Line Resistance and Electromigration Variations Induced by Hydrogen-Based Plasma Modifications to the Silicon Carbonitride/Copper Interface”, May 14, 2007, Journal of the Electrochemical Society Issue 154, pp. H604-H610.
International Business Machines - Corporation
Kotulak Richard
Loke Steven
Roberts Mlotkowski Safran & Cole P.C.
Whalen Daniel
LandOfFree
Structures and methods to enhance Cu interconnect... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structures and methods to enhance Cu interconnect..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structures and methods to enhance Cu interconnect... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2643020