Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-03-21
2006-03-21
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S192000, C257S195000, C257S273000, C257S279000, C257S284000, C257SE27012, C257SE27015
Reexamination Certificate
active
07015519
ABSTRACT:
Methods and systems for fabricating integrated pairs of HBT/FET's are disclosed. One preferred embodiment comprises a method of fabricating an integrated pair of GaAs-based HBT and FET. The method comprises the steps of: growing a first set of epitaxial layers for fabricating the FET on a semi-insulating GaAs substrate; fabricating a highly doped thick GaAs layer serving as the cap layer for the FET and the subcollector layer for the HBT; and producing a second set of epitaxial layers for fabricating the HBT.
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Gedzberg Boris
Gupta Aditya
Krutko Oleh
Shokrani Mohsen
Xie Kezhou
Anadigics Inc.
Huynh Andy
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