Structure with through hole, production method thereof, and...

Details Structure with through hole, production method thereof, and... Structure with through hole, production method thereof, and...

2007-09-18

2007-09-18

Vu, David (Department: 2818)

Etching a substrate: processes

Forming or treating thermal ink jet article

C347S064000

Reexamination Certificate

active

11272869

ABSTRACT:
A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

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Note: Counterpart U.S. Patent No. 6,143,190 also cited.

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