Structure with selective gap fill of submicron interconnects

Details Structure with selective gap fill of submicron interconnects Structure with selective gap fill of submicron interconnects

1996-06-21

1998-08-04

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257307, 257386, 257520, 257621, 257758, 257759, H01L 2928, H01L 2354

Patent

active

057898189

ABSTRACT:
A semiconductor device and method having a low-permittivity material between closely-spaced leads in order to decrease unwanted capacitance, while having a more structurally strong dielectric between widely-spaced leads where capacitance is not as critical. Metal layer 14 is deposited on a substrate 12 of a semiconductor wafer 10, where the metal layer 14 has a first portion 15 and a second portion 17. Widely-spaced leads 16 are formed in the first portion 15 of the metal layer 14, and a first structural dielectric layer 26 is deposited on at least the widely-spaced leads. Closely-spaced leads 18 are formed in the second portion 17 of the metal layer 14, and low-permittivity material 34 is deposited between closely-spaced leads 18. A second structural dielectric layer 36 is deposited on at least low-permittivity material 34 and closely-spaced leads 18. An advantage of the invention includes improved structural strength by placing structurally weak low-permittivity material only where needed, in areas having closely-spaced leads.

REFERENCES:
patent: 5616955 (1997-04-01), Jeng

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