Structure with selective gap fill of submicron interconnects

Details Structure with selective gap fill of submicron interconnects Structure with selective gap fill of submicron interconnects

1995-08-22

1998-05-12

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257642, 257760, H01L 21312, H01L 23522

Patent

active

057510660

ABSTRACT:
A semiconductor device and method having a low-permittivity material between closely-spaced leads in order to decrease unwanted capacitance, while having a more structurally strong dielectric between widely-spaced leads where capacitance is not as critical. Metal layer 14 is deposited on a substrate 12 of a semiconductor wafer 10, where the metal layer 14 has a first portion 15 and a second portion 17. Widely-spaced leads 16 are formed in the first portion 15 of the metal layer 14, and a first structural dielectric layer 26 is deposited on at least the widely-spaced leads. Closely-spaced leads 18 are formed in the second portion 17 of the metal layer 14, and low-permittivity material 34 is deposited between closely-spaced leads 18. A second structural dielectric layer 36 is deposited on at least low-permittivity material 34 and closely-spaced leads 18. An advantage of the invention includes improved structural strength by placing structurally weak low-permittivity material only where needed, in areas having closely-spaced leads.

REFERENCES:
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5155576 (1992-10-01), Mizushima
IBM TDB, Copper Multilevel Interconnections, vol. 33, No. 11, Apr. 1991 pp. 299-300.
Translation of Okamoto, Japan Kokai Pub. #63-0179548, Jul., 1988, 12 pages.

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