Structure with a silicon body having through openings

Details Structure with a silicon body having through openings Structure with a silicon body having through openings

1981-07-17

1983-07-12

Brammer, Jack P.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

2505031, 2505051, 428138, 428466, 430644, 430966, 430967, 378161, H01L 21306

Patent

active

043931278

ABSTRACT:
A structure for shaping or masking energetic radiation is described. The structure comprises a shallow silicon body having at least one through opening, and a metal silicide layer covering the surface of the structure. The structure characterized by having a high mechanical, and thermal stability may be used particularly in electron and X-ray lithography. More specifically, the structure may be used as an aperture for electron beams, or as a mask for X-rays. The production of the structure includes the steps of making through openings in the silicon body, and the forming of the silicide layer by vapor depositing a metal on the surface of the silicon body and by subsequent annealing.

REFERENCES:
patent: 3713922 (1973-01-01), Lepselter et al.
patent: 3794510 (1974-02-01), Scala et al.
patent: 4059480 (1977-11-01), Ruh et al.
patent: 4092211 (1978-05-01), Morris
patent: 4152601 (1979-05-01), Kadota et al.
patent: 4198263 (1980-04-01), Matsuda
patent: 4269654 (1981-05-01), Decker et al.
patent: 4324611 (1981-04-01), Vogel et al.

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