Structure replication through ultra thin layer transfer

Details Structure replication through ultra thin layer transfer Structure replication through ultra thin layer transfer

2011-01-11

2011-01-11

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S074000, C257SE21600, C257SE21703

Reexamination Certificate

active

07867805

ABSTRACT:
Methods and apparatus for forming a product from ultra thin layers of a base material are disclosed. Some embodiments provide a process that allows one to structure a silicon base material, like the ingot, and to transfer this structure into a respective silicon process step. Some embodiments provide a process that allows one to structure any complex structured layer stacks, where the layers can be applied on top of each other using, e.g., bonding technology.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 6162702 (2000-12-01), Morcom et al.
patent: 6964732 (2005-11-01), Solanki
patent: 7420147 (2008-09-01), Faris
patent: 2001/0007789 (2001-07-01), Aspar et al.

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