Structure of very high insertion loss of the substrate noise...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means

Reexamination Certificate

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C257S712000, C257SE21540, C257SE23114, C438S122000, C438S404000, C438S215000

Reexamination Certificate

active

07923808

ABSTRACT:
A structure includes a substrate comprising a region having a circuit or device which is sensitive to electrical noise. Additionally, the structure includes a first isolation structure extending through an entire thickness of the substrate and surrounding the region and a second isolation structure extending through the entire thickness of the substrate and surrounding the region.

REFERENCES:
patent: 5442228 (1995-08-01), Pham et al.
patent: 6300223 (2001-10-01), Chang et al.
patent: 6412786 (2002-07-01), Pan
patent: 6492716 (2002-12-01), Bothra et al.
patent: 6586292 (2003-07-01), Wu et al.
patent: 6737740 (2004-05-01), Forbes et al.
patent: 6879023 (2005-04-01), Gutierrez
patent: 7087496 (2006-08-01), Gutierrez
patent: 7098073 (2006-08-01), Mangrum
patent: 7196427 (2007-03-01), Mangrum
patent: 2005/0110118 (2005-05-01), Udupa et al.
patent: 2006/0163688 (2006-07-01), Ding et al.

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