Structure of thin film transistor

Details Structure of thin film transistor Structure of thin film transistor

2007-10-11

2010-11-16

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S071000, C257SE29273

Reexamination Certificate

active

07834357

ABSTRACT:
A structure of a thin film transistor (TFT) is provided. A substrate has a first surface and a second surface opposite to each other, in which the first surface has a patterned mask layer. A patterned first electrode layer is disposed on the second surface of the substrate and has a gate portion and a capacitor electrode portion. A patterned second electrode layer is disposed on the second surface of the substrate and has a source and a drain, in which the patterned second electrode layer is self-aligned with the patterned first electrode layer by exposing the first surface of the substrate with the patterned mask layer as a mask. An insulating layer is disposed between the patterned first electrode layer and the patterned second electrode layer.

REFERENCES:
patent: 6566172 (2003-05-01), Jackson et al.
patent: 2004/0232495 (2004-11-01), Saito et al.
patent: 2005/0148123 (2005-07-01), Mao-Tsum
patent: 2006/0086979 (2006-04-01), Kim et al.
patent: 2007/0059868 (2007-03-01), Huang et al.
patent: 2007/0146426 (2007-06-01), Nelson et al.

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