Structure of the sensing element of a platinum resistance thermo

Details Structure of the sensing element of a platinum resistance thermo Structure of the sensing element of a platinum resistance thermo

1998-02-05

1999-12-21

Gulakowski, Randy

Etching a substrate: processes

Forming or treating electrical conductor article

Forming or treating resistive material

216 39, 216 41, 438702, 29620, 374114, 338 25, H01B 114

Patent

active

060044713

ABSTRACT:
The structure of the sensing element of a platinum resistance thermometer and method for manufacturing the same, in which the silicon wafer is used as a substrate. A silicon substrate is etched to form a desired wiring pattern, then a silicon dioxide layer is grown as a layer of thermal oxide on the silicon substrate by heating the etched substrate in an oxygen-containing atmosphere. After a platinum film is deposited onto the surface of the silicon dioxide layer, the platinum-coated substrate is subject to gentle polishing. The platinum membrane outside the etched groove is easily detached while the platinum layer inside the etched groove remains attached. Thus a platinum circuit with a desired circuit pattern is formed on the substrate. After heat treatment in a temperature range of 750.degree. C..about. 1500.degree. C. and further processing, the sensing element of a platinum resistance thermometer is obtained. The platinum circuit thus formed is submerged in an groove and has a substantially bulk structure.

REFERENCES:
patent: 4805296 (1989-02-01), Jinda et al.
patent: 5024966 (1991-06-01), Dietrich et al.
patent: 5140393 (1992-08-01), Hijikihigawa et al.

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