Structure of the insulator--semiconductor type

Details Structure of the insulator--semiconductor type Structure of the insulator--semiconductor type

1980-04-02

1982-03-16

Smith, John D.

Stock material or miscellaneous articles

Composite

Of inorganic material

357 23, 357 61, 427 82, 427 87, 428699, 428700, H01L 2118

Patent

active

043201784

ABSTRACT:
Structure of the insulator--semiconductor type constituted by a semiconducting crystalline substrate formed from a III-V compound of formula (A.sup.III B.sup.V) coated with an insulating layer, wherein the substrate has a specific crystalline orientation and wherein the insulator is a sulphide in accordance with the formula (A.sup.III B.sup.V)S.sub.4.
It also relates to a process for the preparation of such a structure.
Applications of the invention occur in the fields of microelectronics and optoelectronics.

REFERENCES:
patent: 3290181 (1966-12-01), Sirtl
patent: 3519492 (1970-07-01), Huml et al.
patent: 3914784 (1975-10-01), Hunsperger et al.
Janssen et al., "Sulfurization Technique for Stabilizing Germanium Surfaces", The Review of Scientific Instruments, vol. 42, No. 11, pp. 1667-1669, Nov. 1979.

Affiliated with

Also associated with

Rating

Structure of the insulator--semiconductor type does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Structure of the insulator--semiconductor type, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of the insulator--semiconductor type will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1642212