Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-12-13
1997-12-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257197, 257198, 257 23, H01L 29201, H01L 29737, H01L 2908
Patent
active
056988621
ABSTRACT:
The invention presents a structure of heterostructure-emitter and heterostructure-base transistor. The device structure are, from bottom upward in succession, a substrate, a buffer layer, a collector layer, a base layer, a quantum well, an emitter layer, a confinement layer and an ohmic contact layer. Of them, except the quantum well which is made of InGaAs and the confinement layer which is formed by AlGaAs, the rest are all made of GaAs material. Base on the design of the heterostructure of base and emitter, a transistor of such structure, under normal operation mode, possesses high current gain and low offset voltage so as to reduce undesirable power consumption. In addition, under the inverted operation mode, the interesting multiple S-shaped negative-differential-resistance may be obtained due to the avalanche multiplication and two-stage carrier confinement effects. These properties cause the device of the invention to provide good promise for amplification, oscillator, and multiple-valued logic circuits applications.
REFERENCES:
patent: 5003366 (1991-03-01), Mishima et al.
Chen, et al., "High Current Gain, Low Offset Voltage Heterostructure Emitter Bipolar Transistor," IEEE Electron Device Letters, vol. 15, No. 9, Sep. 1994, pp. 336-338.
Wen-Chau Liu, et al.; "An Improved Heterostructure-Emitter Bipolar Transistor (HEBT)"; IEEE Electron Device Letters, vol. 12, No. 9, Sep. 1991 pp. 474-476.
T. Tanoue, et al.; "A Triple-Well Resonant-Tunneling Diode for Multiple-Valued Logic Application"; IEEE Electron Device Letters, vol. 9, No. 8, Aug. 1988, pp. 365-367.
C. R. Liu, et al.; "A Novel AMorphous Silicon Doping Superlattice Device with Double Switching Characteristics for Multiple-Valued Logic Applications"; IEEE Electron Dev. Ltrs., vol. 14, No. 8, Aug. 1993: pp. 391-393.
Shey-Shi Lu, et al.: "High-Current-Gain Small-Offset-Voltage In.sub.0.49 .sup.Ga .sub.0.51 P/GaAs Tunneling Emitter Bipolar Transistors Grown by Gas Source Molecular Beam Epitaxy"; IEEE Electron Device Ltrs., vol. 13, No. 9, Sep. 1992, pp. 468-470.
Liu Wen-Chau
Lour Wen-Shiung
Tsai Jung-Hui
Dougherty, Esquire David E.
Guay John
Jackson Jerome
National Science Counsel of Republic of China
LandOfFree
Structure of the heterostructure-emitter and heterostructure-bas does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of the heterostructure-emitter and heterostructure-bas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of the heterostructure-emitter and heterostructure-bas will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-209307