Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-03
2005-05-03
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S066000, C257S072000, C257S347000
Reexamination Certificate
active
06888161
ABSTRACT:
A structure of a thin film transistor (TFT) planar display panel is disclosed. The structure includes a light-transmissible substrate, a buffer layer formed on the light-transmissible substrate, a top-gate TFT structure formed on the buffer layer and including a channel region, and a light-shielding structure formed between a back light source and the top-gate TFT structure, and substantially aligned with the channel region for protecting the channel region from illumination of the back light source. The process for manufacturing a TFT planar display panel is also disclosed.
REFERENCES:
patent: 6259117 (2001-07-01), Takemura et al.
patent: 6285041 (2001-09-01), Noguchi
patent: 6297518 (2001-10-01), Zhang
patent: 6297862 (2001-10-01), Murade
patent: 6307233 (2001-10-01), Awaka et al.
patent: 6740938 (2004-05-01), Tsunoda et al.
Toppoly Optoelectronics Corp.
Tran Thien F
Volpe and Koenig P.C.
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