Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-16
2006-05-16
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C439S046000, C439S047000, C439S147000
Reexamination Certificate
active
07045817
ABSTRACT:
The invention provides a TFT electrode structure and its manufacturing method that can prevent metal diffusion occurring in the fabrication of a TFT, and thereby reduce the risk of contamination of the chemical vapor deposition process due to metallic ion diffusion. The transparent pixel electrode is formed after the gate electrode metal so that the pixel transparent electrode can be used as a barrier layer to prevent metal diffusion under high temperature from the gate electrode metal to adjacent insulating layers or the active layer. Further, the method used to form the transparent pixel electrode is a low-temperature physical vapor deposition process, which affected less by the processing environment, and the transparent pixel electrode is a conductive layer that is not affected by metal diffusion.
REFERENCES:
patent: 5838037 (1998-11-01), Masutani et al.
patent: 6008869 (1999-12-01), Oana et al.
patent: 6218221 (2001-04-01), Sah
patent: 6674502 (2004-01-01), Terakado et al.
patent: 6791111 (2004-09-01), Yamazaki et al.
patent: 2003/0170926 (2003-09-01), Nakayama et al.
patent: 2004/0063374 (2004-04-01), So et al.
patent: 2004/0140566 (2004-07-01), Jeong et al.
patent: 2004/0223090 (2004-11-01), Takahashi et al.
patent: 2005/0082528 (2005-04-01), Kobayashi et al.
Chen Cheng-Chung
Chen Cheng-Hsing
Chen Chia-Hsiang
Chu Te-Ming
Huang Yi-Hsun
Au Optronics Corp
Chi Mei Optoelectronics Corp.
Chunghwa Picture Tubes Ltd.
Fenty Jesse A.
Hannstar Display Corp
LandOfFree
Structure of TFT electrode for preventing metal layer... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of TFT electrode for preventing metal layer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of TFT electrode for preventing metal layer... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3574670