Structure of sweep-type fingerprint sensing chip capable of...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal

Reexamination Certificate

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C438S048000, C382S124000

Reexamination Certificate

active

07397096

ABSTRACT:
A structure of sweep-type fingerprint sensing chip capable of resisting electrostatic discharge (ESD) includes a semiconductor substrate, and a sweep-type fingerprint sensing chip formed on the semiconductor substrate, a polymer layer and a conducting metal layer. The sweep-type fingerprint sensing chip includes a sensing array region and a peripheral circuit region. The sensing array region has an exposed area for sensing a plurality of fingerprint fragment images as a finger sweeps thereacross. The peripheral circuit region, which is formed on the substrate and located around the sensing array region, controls an operation of the sensing array region. The polymer layer is disposed on the peripheral circuit region and has a flat and smooth outer surface. The conducting metal layer is disposed on the flat and smooth outer surface of the polymer layer. The conducting metal layer discharges the approaching electrostatic charges to the ground to avoid damaging of the sensing chip.

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