Structure of silicon controlled rectifier

Details Structure of silicon controlled rectifier Structure of silicon controlled rectifier

2008-05-07

2009-12-29

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Avalanche diode

C257S106000, C257S175000, C257S199000, C257S481000, C257S482000, C257S551000, C257S604000, C257S605000, C257S606000, C257SE29180, C257SE29334, C257SE29335, C257SE31063

Reexamination Certificate

active

07638857

ABSTRACT:
A silicon controlled rectifier structure is provided in a substrate having a first conductive type. A well region formed within the substrate has a second conductive type. A first dopant region formed within the substrate and the well region has the first conductive type. A second dopant region formed within the substrate and a portion of the well region has the second conductive type. A third dopant region formed under the second dopant region has the first conductive type, in which the second and the third regions form a vertical Zener diode. A fourth dopant region formed within the substrate and separated from the second dopant region by a separation structure has the second conductive type. A fifth dopant region is formed within the substrate in a manner that the fourth dopant region is between the isolation structure and the fifth dopant region, and has the first conductive type.

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