Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-04-25
2006-04-25
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S301000, C257S309000, C257S295000, C257S308000, C257S310000
Reexamination Certificate
active
07034396
ABSTRACT:
A semiconductor element includes a semiconductor substrate; a film of electrode material on the substrate at a thickness corresponding to the height of a pair of confronting electrodes standing vertical; a gap in the film of electrode material at a position so that confronting surfaces of the electrodes are formed as having a width corresponding to an interval of the confronting surfaces of the electrodes; and an insulating film in the gap. Then, a pair of confronting electrodes is formed by etching the film of electrode material. An intermediate film is formed on the pair of confronting electrodes; plugs are connected to the pair of confronting electrodes through the intermediate film; and finally wiring is connected to the plugs.
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patent: 6403416 (2002-06-01), Huang et al.
patent: 2003/0183862 (2003-10-01), Jin et al.
patent: 06-077430 (1994-03-01), None
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