Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2005-06-21
2005-06-21
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S102000, C257S013000, C257S083000, C257S021000, C257S079000, C257S080000, C257S018000
Reexamination Certificate
active
06909108
ABSTRACT:
An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.
REFERENCES:
patent: 5780867 (1998-07-01), Fritz et al.
patent: 2002/0162995 (2002-11-01), Petroff et al.
patent: 2002237456 (2002-08-01), None
Cherng Ya-Tung
Lee Si-Chen
Lin Shih-Yen
Tang Shiang-Feng
Chung-Shan Institute of Science and Technology
Erdem Fazli
Flynn Nathan J.
Jianq Chyun IP Office
LandOfFree
Structure of quantum dot light emitting diode and method of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of quantum dot light emitting diode and method of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of quantum dot light emitting diode and method of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3478745