Structure of power semiconductor with twin metal and ceramic...

Details Structure of power semiconductor with twin metal and ceramic... Structure of power semiconductor with twin metal and ceramic...

2005-11-02

2008-11-04

Tran, Thien F (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

C257S690000

Reexamination Certificate

active

07446401

ABSTRACT:
A designing for a power semiconductor, and especially to a structure of a power semiconductor formed by using the basic materials including two metal plates and a ceramic plate, in the power semiconductor, mainly surfaces of the ceramic base plate provided with a receiving groove is metallized, and the metallic base plates having electric connecting pins extending outwards therefrom are placed at the two lateral sides of the ceramic base plate, then a chip is placed in the receiving groove of the ceramic base plate, and the ceramic base plate is sintered together with the two metallic base plates, thus the structure of the power semiconductor with the twin metal plates and the ceramic plate is formed.

REFERENCES:
patent: 2005/0035442 (2005-02-01), Gerbsch et al.

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