Structure of phase shifting mask and method of manufacturing the

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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058244387

ABSTRACT:
The structure of a phase shift mask and a method of manufacturing the same are disclosed. A phase shifting mask in accordance with the present invention comprises a light transmitting substrate, a phase shifting layer formed on the upper side of the light transmitting substrate, an adhesive layer formed on the phase shifting layer, and a light shielding layer formed on the adhesive layer. Accordingly, when etching the phase shifting layer, the light shielding layer is protected by the adhesive layer. The adhesive strength is increased due to the adhesive layer formed between the phase shifting layer and the light shielding layer, thereby much improving the reliability of the phase shifting mask.

REFERENCES:
patent: 5356738 (1994-10-01), Inoue et al.
patent: 5582939 (1996-12-01), Pierrat
patent: 5656397 (1997-08-01), Imai et al.
Lin, B.J., "Phase-Shifting and Other Challenges in Optical Mask Technology," BACUS, vol. 7, Issue 1, Feb. 1, 1991.
Levensen, M.C., et al., "Improving Resolution in Photolithography with a Phase-Shifting Mask," IEEE Transactions on Electron Devices, vol. ED 29, No. 12.
Pierrat, C. et al., "Phase-Shifting Mask Topography Effects on Lithographic Image Quality," IEEE, 1992.

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