Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-08-26
1998-08-11
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257 76, 257473, 257615, 257764, 257767, H01L 2348, H01L 310257, H01L 27095, H01L 2920
Patent
active
057931097
ABSTRACT:
An ohmic contact electrode for a semiconductor device which has a low contact resistance and high stability. The ohmic contact electrode includes: a semiconductor substrate; an atomic doping layer developed on the semiconductor substrate wherein the atomic doping layer is formed by doping impurities such that an energy level of the layer is higher than a Fermi level; a semiconductor layer developed on the atomic doping layer wherein the semiconductor layer is formed of the same material as in the semiconductor substrate; a metal electrode formed on the semiconductor layer for establishing an electric connection with the semiconductor substrate; wherein the semiconductor layer has a thickness sufficient for carriers to transfer between the metal electrode and the atomic doping layer by tunneling through the semiconductor layer.
REFERENCES:
patent: 5399886 (1995-03-01), Hasegawa
patent: 5610410 (1997-03-01), Imanishi
Advantest Corp.
Arroyo Teresa M.
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