Structure of metal-insulator-semiconductor-like mutiple-negative

Details Structure of metal-insulator-semiconductor-like mutiple-negative Structure of metal-insulator-semiconductor-like mutiple-negative

1997-04-07

1998-11-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Heterojunction formed between semiconductor materials which...

257 96, 257 97, 257280, 257614, 257655, 257657, H01L 2988

Patent

active

058312978

ABSTRACT:
The present invention provides a structure of a metal-insulator-semiconductor (MIS)-like multiple-negative-differential-resistance (MNDR) device and the fabrication method thereof. The device of the present invention has the characteristics of dual-route and MNDR at low temperatures. These characteristics result from the successive barrier-lowering and potential-redistribution effect when conducting carriers fall into a quantum well. MNDR devices have excellent potential in multiple-value logic circuitry applications and are capable of reducing circuitry complexity.

REFERENCES:
patent: 4857971 (1989-08-01), Burnham
patent: 5506423 (1996-04-01), Saeki
patent: 5633516 (1997-05-01), Mishima et al.
patent: 5701020 (1997-12-01), Liu et al.

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