Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1993-01-19
1994-10-11
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 66, 257 72, 257347, H01L 2904, H01L 31036, H01L 2936, H01L 2701
Patent
active
053550021
ABSTRACT:
In an active matrix liquid crystal display, an extra insulating layer is deposited over the active region of the thin film transistor and the transparent electrode of the picture element. The interconnection between the source electrode of the TFT and the transparent electrode lies over the extra insulating layer. The edge between the a-Si and S/D electrode contact is passivated by the extra insulating to avoid direct contact of the S/D metal electrode with the undoped amorphous silicon channel. Contacts to the TFT source and drain electrodes are made through a heavily-doped amorphous silicon to avoid direct contact of aluminum with undoped amorphous silicon channel, which can eliminate dark leakage current with negative gate bias. The metal contact to the transparent electrode is made via a contact hole in the extra insulating layer to avoid the etching solution of aluminum interconnection from attacking the transparent electrode. The extra insulating layer also prevents short circuit between the signal lines and the transparent electrodes.
REFERENCES:
patent: 5166085 (1992-11-01), Wakai et al.
IEDM, 88, "An a-Si TFT With a New Light-Shield Structure and Its Application to Active Matrix Liquid-Crystal Displays" by Akiyama et al., p. 268-p. 271.
Proceeding of the SID, vol. 28/2, 1987, "A 10-in. Diagonal Active Matrix LCD Addressed by a-Si TFTS" by Sakamoto et al., p. 145-p. 148.
J. Electrochem. Soc., vol. 139, No. 2, Feb. 1992, "Reductive Corrosion of ITO in Contact With Al in Alkaline Solutions" by Meerakker et al., p. 385-p. 390.
Hille Rolf
Industrial Technology Research Institute
Lin H. C.
Loke Steven
LandOfFree
Structure of high yield thin film transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of high yield thin film transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of high yield thin film transistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1660758