Structure of high electron mobility transistor, a device...

Details Structure of high electron mobility transistor, a device... Structure of high electron mobility transistor, a device...

2009-10-07

2010-11-09

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Forming schottky junction

Compound semiconductor

C438S167000, C438S571000, C438S572000, C257SE21046, C257SE21047, C257SE21374

Reexamination Certificate

active

07829448

ABSTRACT:
Disclosed herein are a structure of a metal oxide semiconductor pseudomorphic high electron mobility transistor (MOS-PHEMT) suitable for use in a semiconductor device, such as a single-pole-double-throw (SPDT) switch of a monolithic microwave integrated circuit (MMIC); and a method of producing the same. The MOS-PHEMT structure is characterized in having a gate dielectric layer formed by atomic deposition from a gate dielectric selected from the group consisting of Al2O3, HfO2, La2O3, and ZrO2, and thereby rendering the semiconductor structure comprising the same, such as a high frequency switch device, to have less DC power loss, less insertion loss and better isolation.

REFERENCES:
patent: 2003/0122152 (2003-07-01), Kim et al.
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patent: 2005/0148194 (2005-07-01), Lan et al.
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patent: 2008/0017844 (2008-01-01), Nichols et al.
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