Structure of electrode junction for semiconductor device

Metal fusion bonding – Process – Critical work component – temperature – or pressure

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357 85, 228110, 228111, B23K 2010

Patent

active

050033735

ABSTRACT:
A structure of an electrode junction for a semiconductor device comprises an insulating film covering the entire surface of a silicon substrate, an aluminum electrode layer which is formed on the insulating film, a copper ball bonded on the electrode layer, and a copper-aluminum alloy layer continuously formed from the copper ball to the aluminum electrode layer. The aluminum layer under the copper ball is not separated from the aluminum layer surrounding the copper ball, so that alloy layer deterioration along the periphery thereof does not cause the electrical resistance to increase. This structure will increase the device life time to the maximum level.

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