Metal fusion bonding – Process – Critical work component – temperature – or pressure
Patent
1988-10-26
1991-03-26
James, Andrew J.
Metal fusion bonding
Process
Critical work component, temperature, or pressure
357 85, 228110, 228111, B23K 2010
Patent
active
050033735
ABSTRACT:
A structure of an electrode junction for a semiconductor device comprises an insulating film covering the entire surface of a silicon substrate, an aluminum electrode layer which is formed on the insulating film, a copper ball bonded on the electrode layer, and a copper-aluminum alloy layer continuously formed from the copper ball to the aluminum electrode layer. The aluminum layer under the copper ball is not separated from the aluminum layer surrounding the copper ball, so that alloy layer deterioration along the periphery thereof does not cause the electrical resistance to increase. This structure will increase the device life time to the maximum level.
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Fujimoto Hitoshi
Tsumura Kiyoaki
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Viet Q.
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