Structure of complementary field effect transistor

Details Structure of complementary field effect transistor Structure of complementary field effect transistor

1988-03-25

1990-04-24

James, Andrew J.

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357 55, 357 234, 365181, 365182, H01L 2702

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049203975

ABSTRACT:
For reduction in occupation area, there is provided a complementary field effect transistor consisting of a n-channel MIS type field effect transistor formed along a side wall of a p-type silicon substrate and a p-channel MIS type field effect transistor formed along a side wall of an n-type well in the p-type silicon substrate, and both of the side wall of the silicon substrate and the side wall of the n-type well define a groove where a conductive material is deposited to provide an interconnection between the n-type and p-type MIS type field effect transistors and another complementary field effect transistor.

REFERENCES:
patent: 4566025 (1986-01-01), Jastrzebski
patent: 4670768 (1987-06-01), Sunami
patent: 4672410 (1987-06-01), Miura
patent: 4740826 (1988-04-01), Chatterjee

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