Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-03-15
2011-03-15
Chu, Chris (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23174, C257S700000, C257S786000, C438S629000, C438S637000, C361S306300
Reexamination Certificate
active
07906850
ABSTRACT:
A circuit board structure and a method for fabricating the same are proposed. The structure includes an insulating protective layer having a plurality of openings in which conductive vias are formed, a patterned circuit layer formed on the surface of the insulating protective layer and electrically connected to the conductive vias in the openings of the insulating protective layer, and a dielectric layer formed on the insulating protective layer and on the surface of the patterned circuit layer, wherein a plurality of openings are formed in the dielectric layer to thereby expose parts of the patterned circuit layer. Accordingly, the present invention reduces the thickness of a circuit board, which reduces package size, improves product performance, and conforms to the developmental trend toward smaller electronic devices.
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Hsu Shih-Ping
Wang Hsien-Shou
Wang Shing-Ru
Chu Chris
Sawyer Law Group P.C.
Unimicron Technology Corp.
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