Structure of chip on chip mounting preventing from crosstalk noi

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip

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Details

257686, 257659, 257660, H01L 23552, H01L 2348, H01L 2302

Patent

active

058216251

ABSTRACT:
The present invention reduces crosstalk, which occurs as a result of interference between signals running in each of respective wiring layers of a first semiconductor chip and a second semiconductor chip stacked surface to surface with a small gap. The semiconductor device includes a first semiconductor chip 1 having a first electrode pad 2 and a first wiring layer 9 in the main surface, and a second semiconductor chip 5 having a second electrode pad 6 and a second wiring layer 10 in the main surface confronting the first semiconductor chip. A bump 4 is provided for electrically coupling the first electrode pad 2 and the second electrode pad 6 together. An insulation layer 8 is disposed between the main surfaces of first semiconductor chip 1 and second semiconductor chip 5. An electro-conductive layer 7 is disposed between the main confronting surfaces of the first semiconductor chip and the second semiconductor chip.

REFERENCES:
patent: 4763188 (1988-08-01), Johnson
patent: 4811082 (1989-03-01), Jacobs et al.
patent: 5508565 (1996-04-01), Hatakeyama et al.
patent: 5596225 (1997-01-01), Mathew et al.
patent: 5656856 (1997-08-01), Kweon

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