Structure of capacitor for dynamic random access memory and meth

Details Structure of capacitor for dynamic random access memory and meth Structure of capacitor for dynamic random access memory and meth

1997-06-26

1999-02-09

Brown, Peter Toby

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438240, 438254, 438397, 148DIG14, H01L 218242

Patent

active

058693823

ABSTRACT:
A lower electrode of a capacitor is formed by a cylindrical conductive film and a pillar shaped conductive film disposed coaxially within the cylindrical conductive film. Consequently, in this capacitor, even if a plane area of the lower electrode is so small that double cylinder type cannot be realized, opposing area of the lower electrode and upper electrode is larger as compared to a structure in which the lower electrode is of single cylinder type. This invention proposes such a capacitor and a method of manufacturing thereof. As a result, it is possible to increase electric storage capacity if the plane area of the capacitor is the same and further miniaturize the capacitor if the electric storage capacity is the same.

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