Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With base region having specified doping concentration...
Patent
1994-09-02
1996-08-20
Fahmy, Wael M.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With base region having specified doping concentration...
257558, 257564, H01L 27082, H01L 2900, H01L 27102
Patent
active
055481582
ABSTRACT:
A special two-dimensional intrinsic base doping profile is utilized to improve the output current-voltage characteristics of a vertical bipolar transistor whose intrinsic base includes a main intrinsic portion. The special doping profile is achieved with a pair of more lightly doped base portions that encroach substantially into the intrinsic base below the main intrinsic base portion. The two deep encroaching base portions extend sufficiently close to each other to set up a two-dimensional charge-sharing mechanism that typically raises the magnitude of the punch-through voltage. The transistor's current-voltage characteristics are thereby enhanced.
REFERENCES:
patent: 4512816 (1985-04-01), Ramde et al.
patent: 5006476 (1991-04-01), De Jong et al.
patent: 5079182 (1992-01-01), Ilderem et al.
Iranmanesh et al, "A 0.8-.mu.m Advanced Single-Poly BiCMOS Technology for High-Density and High-Performance Applications," IEEE J. Solid-State Circs., Mar. 1991, pp. 422-426.
Rein et al, "A Semi-Physical Bipolar Transistor Model for the Design of Very-High-Frequency Analog ICs," 1992 Bipolar/BiCMOS Circs. and Tech. Meet., 7-8 Oct. 1992, pp. 217-220.
Blicher, Field-Effect and Bipolar Power Transistor Physics (Academic Press), 1981, pp. 114-117.
Sze, Semiconductor Devices, Physics and Technology (John Wiley & Sons), 1985, pp. 134-139.
Tang et al, "Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors," IEEE Electron Dev. Lett.., Apr. 1987, pp. 174-175.
Lu et al, "Lateral Encroachment of Extrinsic-Base Dopant i Submicrometer Bipolar Transistors," IEEE Electron Dev. Lett., Oct. 1987, pp. 496-498.
Muller et al, Device Electronics for Integrated Circuits (John Wiley & Sons), 1977, pp. 241-245.
Philips, Transistor Engineering (McGraw-Hill, reprinted Robert E. Krieger Pub. Co., 1981), 1962, pp. 298-304.
Warner et al, Transistor Fundamentals for the Integrated-Circuit Engineer (John Wiley & Sons), 1983, pp. 559-562.
Grove, Physics and Technology of Semiconductor Devices (John Wiley & Sons), 1977, pp. 228-230.
Bulucea Constantin
Grubisich Michael J.
Fahmy Wael M.
Meetin Ronald J.
National Semiconductor Corporation
LandOfFree
Structure of bipolar transistors with improved output current-vo does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Structure of bipolar transistors with improved output current-vo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Structure of bipolar transistors with improved output current-vo will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2332209