Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-05-12
1996-11-26
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257347, 257 60, H01L 2348, H01L 2940, H01L 2976, H01L 31036
Patent
active
055788386
ABSTRACT:
A thin film transistor and a fabricating method for a thin film transistor is disclosed which may be suitable for memory cells of a static random access memory (SRAM) or other devices. A thin film transistor according to this invention may include an insulation substrate, a gate electrode formed to have a negative slope at one side thereof on the insulation substrate, an insulation film side wall formed at the other side of the gate electrode, a gate insulation film formed on the insulation substrate, gate electrode and side wall, a semiconductor layer formed on the gate insulation film, impurity diffusion regions selectively formed within the semiconductor layer over the gate electrode, the side wall and the insulation substrate on the other side of the gate electrode, and a channel region formed within the semiconductor layer at the side of the gate electrode having the negative slope. A method for fabricating a thin film transistor in accordance with this invention may include processes for forming a gate electrode on an insulation substrate, forming a side wall at a side of the gate electrode, etching the other side of the gate electrode selectively to have a negative slope, depositing a gate insulation film and a semiconductor layer successively on the overall surface, forming a source and a drain regions by an vertical ion injunction. Transistors having a negative slope at both sides of the gate electrode also are disclosed.
REFERENCES:
patent: 5311040 (1994-05-01), Miramatsu
C. T. Liu, et al.; "High Reliability And High Performance 0.35um Gate-Inverted TFT's for 16Mbit SRAM Applications Using Self-Aligned LDD Structures"; IEDM pp. 823-826 Dec. 1992.
Cho Seok W.
Choi Jong M.
LG Semicon Co. Ltd.
Loudermilk Alan R.
Meier Stephen
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