Structure of a phase shifting mask and method of fabricating the

Details Structure of a phase shifting mask and method of fabricating the Structure of a phase shifting mask and method of fabricating the

1998-05-26

1999-12-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

060079509

ABSTRACT:
A method for fabricating an alternating phase shifting mask includes a transparent substrate, a number of oblique layers formed on the transparent substrate, and a number of embedded phase shift layers inside the transparent substrate. Then, a photolithography process is applied to form a photoresist layer on the transparent substrate corresponding to a desired pattern and, therefore, exposing a portion of the transparent substrate. Then, an ion implantation process utilizing the photoresist layer as a mask is applied to form the embedded phase shift layers and the photoresist layer is removed after ion implantation. The embedded phase shift layers are formed in alternating positions in the transparent portion between the oblique layers.

REFERENCES:
patent: 5217830 (1993-06-01), Lowrey
patent: 5459002 (1995-10-01), Alpay et al.
patent: 5679483 (1997-10-01), Maurer
patent: 5897976 (1999-04-01), Carcia et al.

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