Structure of a lithography mask

Details Structure of a lithography mask Structure of a lithography mask

2005-10-19

2010-06-29

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

07745070

ABSTRACT:
The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO2. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.

REFERENCES:
patent: 4110815 (1978-08-01), Frade et al.
patent: 6298113 (2001-10-01), Duclos et al.
patent: 6998204 (2006-02-01), Furukawa et al.
patent: 7282307 (2007-10-01), Hector et al.
patent: 7390596 (2008-06-01), Ishibashi et al.
patent: 2003/0228530 (2003-12-01), Yan et al.
patent: 2004/0125649 (2004-07-01), Durlam et al.
patent: WO 03/085709 (2003-10-01), None
Seach Report, FR 0411073 FA 656654, 3 pgs, (Mar. 10, 2005).

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