Structure of a color sensor of a diode

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

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257435, 257440, 257233, H01L 2934

Patent

active

059629061

ABSTRACT:
A structure color sensor of a diode includes following: Firstly, a color sensor layer including a number of color sensor areas is formed on a substrate for absorbing and sensing the different color light. Then, a black matrix film covered by a transparent planarization film is on the color sensor layer by using dispersed pigment method and is placed on the interfaces between color sensor areas to reduce the interference effects between monochromatic lights. Then, a color filter including at least a red filter, a green filter, and a blue filter is on this transparent planarization film. And then, a cover film is formed on the color filter for protection.

REFERENCES:
patent: 4654536 (1987-03-01), Saito et al.
patent: 5229595 (1993-07-01), Mikkelsen, Jr. et al.
patent: 5479049 (1995-12-01), Aoki et al.

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