Structure of a CCD image sensor particularly on an interline tra

Details Structure of a CCD image sensor particularly on an interline tra Structure of a CCD image sensor particularly on an interline tra

1993-07-27

1994-05-17

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257224, 257233, H01L 29796, H01L 2714

Patent

active

053130804

ABSTRACT:
A p type well is formed on an n type substrate and photodiode and VCCD regions are repeatedly at predetermined intervals in turns on the surface of the p type well.
In an interline transfer image sensor, the p type well is formed on the n type substrate and the photodiode and VCCD region of predetermined intervals are repeatedly formed in turn on the surface of the p type well. The p.sup.+ type channel ion stop layer is formed at both edges of the VCCD region and the pinning voltage is applied to the p.sup.+ type channel stop layer. Accordingly, the variable potential of the potential contour of the VCCD region is increased and the storing capacity of the charge and the efficiency of the charge transfer are maximized side by side.

REFERENCES:
patent: 4028716 (1977-06-01), Van Santen et al.
patent: 4527182 (1985-07-01), Ishihara et al.
patent: 4748486 (1988-05-01), Miyatake
patent: 4984044 (1991-01-01), Yamamura

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