Structure including multiple wire-layers and methods for...

Details Structure including multiple wire-layers and methods for... Structure including multiple wire-layers and methods for...

2006-03-21

2006-03-21

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S706000, C438S710000, C438S723000, C438S724000, C438S618000, C438S622000, C438S637000

Reexamination Certificate

active

07015143

ABSTRACT:
A method for forming a structure including multiple wire-layers, the method including providing a plurality of first wires (in a layer) on an underlying layer; providing a liner insulating film on the underlying layer so as to coat the first wires and have concave portions respectively between the mutually adjacent first wires; providing a buried insulating film in the concave portions and on the liner insulating film; providing a cap insulating film so as to coat the buried insulating film; and providing a second wire layer on or above the cap insulating film. The buried insulating film is made of an insulating material having a dielectric constant, which is lower than that of the liner insulating film and the cap insulating film.

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