Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-01-16
2007-01-16
Parekh, Nitin (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S760000, C257S751000, C257S752000, C257S774000
Reexamination Certificate
active
09820079
ABSTRACT:
The invention relates to a microelectronic device and a structure therein that includes a diffusion barrier layer having a first thickness and a first dielectric constant. An etch stop layer is disposed above and on the diffusion barrier layer. The etch stop layer has a second thickness and a second dielectric constant.
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Kloster Grant
Leu Jihperng
Marrow Patrick
Ott Andrew
Wong Lawrence
Intel Corporation
Parekh Nitin
Plimier Michael D.
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