Structure for use in self-biasing and source bypassing a package

Details Structure for use in self-biasing and source bypassing a package Structure for use in self-biasing and source bypassing a package

1989-03-02

1990-10-30

Carroll, J.

357 68, 357 74, 357 80, H01L 2702, H01L 2378, H01L 2302, H01L 3902

Patent

active

049672584

ABSTRACT:
The present invention provides a structure for use in self-biasing and source bypassing a packaged, field-effect transistor (FET) having first and second leads. The structure is readily assembled and provides an excellent noise figure.

REFERENCES:
patent: 4135168 (1979-01-01), Wade
patent: 4183041 (1980-01-01), Goel
patent: 4298846 (1981-11-01), Hirano et al.
patent: 4598307 (1986-07-01), Wakabayashi et al.
patent: 4611882 (1986-09-01), Ushida
patent: 4612566 (1986-09-01), Kowata et al.
patent: 4617586 (1986-10-01), Cuvilliers et al.
"Self-Bias Technique Improves Amplifier Gain and Noise Figure", M. J. Fithian, Microwaves & RF, (May, 1988), pp. 213-218.

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