Structure for temperature compensating the inverse saturation cu

Details Structure for temperature compensating the inverse saturation cu Structure for temperature compensating the inverse saturation cu

1992-04-23

1994-09-27

Voeltz, Emanuel T.

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

323907, 3072961, G05F 316

Patent

active

053509986

ABSTRACT:
A circuit for temperature compensating the inverse saturation current of a bipolar transistor having a collector region, base and emitter regions defining a base-emitter junction is disclosed. A diode element having substantially said same saturation current is parallel-connected in reverse configuration to said base-emitter junction of the bipolar transistor. If the bipolar transistor is NPN type, the diode has an anode and cathode connected respective to the emitter and base regions of the transistor.

REFERENCES:
patent: 3327131 (1967-06-01), Grimmer
patent: 3706047 (1972-12-01), Gunzel
patent: 3887863 (1975-06-01), Brokaw
patent: 4028564 (1977-06-01), Streit et al.
patent: 4471236 (1984-09-01), Patterson

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