Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-05-10
2011-05-10
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S306000, C257S307000, C257S528000, C257SE29343, C438S381000
Reexamination Certificate
active
07939910
ABSTRACT:
Capacitance circuits are provided disposing a lower vertical-native capacitor metal layer above a planar front-end-of-line semiconductor base substrate, planar metal bottom plates spaced a bottom plate distance from the base and top plates above the bottom plates spaced a top plate distance from the base defining metal-insulator-metal capacitors, top plate footprints disposed above the base substrate smaller than bottom plate footprints and exposing bottom plate remainder upper lateral connector surfaces; disposing parallel positive port and negative port upper vertical-native capacitor metal layers over and each connected to top plate and bottom plate upper remainder lateral connector surface. Moreover, electrical connecting of the first top plate and the second bottom plate to the positive port metal layer and of the second top plate and the first bottom to the negative port metal layer impart equal total negative port and positive port metal-insulator-metal capacitor extrinsic capacitance.
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Cho Choongyeun
Kim Jong-hae
Kim Moon J.
Plouchart Jean-Olivier
Trzcinski Robert E.
Daugherty Patrick J.
Driggs, Hogg, Daugherty & Del Zoppo Co., LPA
International Business Machines - Corporation
Lin John
Warren Matthew E
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