Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1991-10-11
1994-12-20
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257409, 257499, 257646, H02L 4500
Patent
active
053748336
ABSTRACT:
The invention relates to an integrated circuit including one or more amorphous silicon layers for neutralizing charges which occur in various dielectric layers during fabrication. The amorphous silicon layers include dangling silicon bonds which neutralize charges which would otherwise cause isolation breakdown, impair integrated circuit performance and increase manufacturing costs.
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Chang Kuang-Yeh
Jain Vivek
Nariani Subhash R.
Pramanik Dipankar
Crane Sara W.
VLSI Technology Inc.
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