Structure for strained channel field effect transistor pair...

Details Structure for strained channel field effect transistor pair... Structure for strained channel field effect transistor pair...

2006-08-29

2006-08-29

Nguyen, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C438S618000, C438S655000

Reexamination Certificate

active

07098536

ABSTRACT:
A structure is provided which includes a semiconductor device region including a first portion and a second portion. A current-conducting member is provided, which extends horizontally over the first portion but not over the second portion. A first film, such as a stress-imparting film, extends over the second portion and only partially over the current-conducting member to expose a contact portion of the member. A first contact via is provided in conductive communication with the contact portion of the member, the first contact via having a self-aligned silicide-containing region. A second contact via is provided in conductive communication with the second portion of the semiconductor device region, the second contact via extending through the first film.

REFERENCES:
patent: 6211035 (2001-04-01), Moise et al.
patent: 6599813 (2003-07-01), Beyer et al.
patent: 6943398 (2005-09-01), Ito et al.
patent: 2003/0222299 (2003-12-01), Miura

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